• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    When a silicon oxide film is formed on the large-area substrate by CVD using TEOS or the like, generation of dust particles is suppressed, ion incidence to the substrate is prevented, and plasma distribution in the vicinity of the substrate is improved. Plasma is generated in the vacuum chamber 12 to generate active species (radical), and a film forming process is performed on the substrate 11 with the active species and material gas, and a partition wall in which a plurality of holes 22 are formed is formed. The plate 15 is provided to separate the inside of the vacuum chamber into the plasma generation space 16 and the film formation processing space 17, and the material gas is formed through a plurality of passages provided through the plasma generation space and the partition plate. Active species generated directly in the processing space and generated in the plasma generating space are introduced into the film formation processing space through a plurality of holes formed in the partition plate.
    公开号:KR19990072926A
    申请号:KR1019990006256
    申请日:1999-02-25
    公开日:1999-09-27
    发明作者:노가미히로시
    申请人:니시히라 순지；아네르바 가부시키가이샤；
    IPC主号:
    专利说明:

    CVD DEPOSITION APPARATUS
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD film deposition apparatus, and more particularly, to a CVD film deposition apparatus using a plasma and suitable for film formation on a large flat panel substrate.
    As a manufacturing method of a large size liquid crystal display, it is conventionally known to use a high temperature polysilicon type TFT (thin film transistor) and to use a low temperature polysilicon type TFT. In the manufacturing method using a high temperature polysilicon TFT, a quartz substrate which withstands high temperature of 1000 degreeC or more was used in order to obtain the high quality oxide film and the oxide film interface with polysilicon. On the other hand, in manufacture of low temperature polysilicon TFT, it is necessary to form into a film in low temperature environment (for example, 400 degreeC), in order to use the normal glass substrate for TFT. Since the method of manufacturing a liquid crystal display using a low temperature polysilicon TFT does not need to use a special board | substrate, it is practically used in recent years, and the yield is expanded.
    In the manufacture of a liquid crystal display using a low temperature polysilicon TFT, CVD is used when a suitable silicon oxide film is formed as a gate insulating film at a low temperature. When forming a silicon oxide film by this CVD, silane and tetraethoxysilane (hereinafter, TEOS) are used as typical material gases.
    In the case of forming a silicon oxide film by CVD using TEOS as the material gas, according to the conventional plasma processing apparatus, the material gas is supplied directly from the plasma generated in the plasma processing apparatus. The reactant gases and oxygen react violently to produce reactants in the gas phase. This reactant is dust particles that cause defects in the TFT elements. There was a problem that the retention was lowered due to the generation of dust particles. In addition, since plasma exists in contact with the substrate, high energy ions enter the silicon oxide film, thereby degrading the film properties.
    Conventionally, in order to solve the above problem, a plasma processing apparatus using a remote plasma method has been proposed. In the remote plasma system, within the plasma processing apparatus, a plasma is generated to separate a region where active species such as radicals are generated from the substrate, and a material gas is provided near the substrate placement region. The radicals generated in the plasma region diffuse in the direction of the region where the substrate is disposed and are supplied to the front space of the substrate processing surface. By virtue of the remote plasma type plasma processing apparatus, the intense reaction between the plasma and the material gas is suppressed, the amount of dust particles generated is reduced, and the ion incidence to the substrate is also limited.
    However, in the case of the plasma processing apparatus of the remote plasma system, the plasma generation region and the substrate arrangement region are formed separately through the connection space. The radicals generated in the place separated from the substrate are supplied to the substrate by diffusion through the connection space.
    In the remote plasma system, there is a problem that the deposition rate is lowered and the distribution in the vicinity of the surface of the substrate is poor. In particular, since the distribution in the surface vicinity of a board | substrate is bad, the problem which cannot cope with the large area board | substrate used for a large size liquid crystal display was raised.
    SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and in the production of large liquid crystal displays using low temperature polysilicon TFTs, when a silicon oxide film is formed on a large area substrate using a material gas such as TEOS by CVD, The present invention provides a CVD film forming apparatus which can suppress generation of dust particles, prevent ion incidence of a substrate, improve plasma distribution in the vicinity of the substrate, and can be effectively used for forming a large-area substrate.
    1 is a longitudinal sectional view showing main parts of a first embodiment of the present invention;
    2 is an enlarged cross-sectional view of a hole formed in a partition plate,
    3 is a partial cross-sectional view of the electrode for discharge in FIG.
    4 is a longitudinal sectional view showing main parts of a second embodiment of the present invention;
    Explanation of the sign
    11 glass substrate 12 vacuum vessel
    15 bulkhead plates 16 plasma generated space
    17 tabernacle treatment space 22 holes
    23 plasma 25 pipe member
    26 electrode 33 uniform plate
    In order to achieve the above object, the CVD film deposition apparatus according to the present invention is configured as follows.
    The CVD film forming apparatus of the present invention is an apparatus for generating plasma in a vacuum vessel to generate amplified species (radicals), and forming a film on the substrate with the active species and a precursor gas. In the CVD film forming apparatus of the present invention, a partition plate having a plurality of holes is provided to separate the interior of the vacuum container into a plasma generating space and a film forming processing space. The material gas provided in the vacuum vessel is directly introduced into the film formation processing space through a plurality of conductive passages distributed and distributed through the plasma generation space and the partition plate, and the active species generated in the plasma generation space are formed in the plurality of holes formed in the partition plate. It is introduced into the film formation processing space through. In the CVD film deposition apparatus using the plasma of the present invention, the material gas is introduced directly into the film formation processing space on the entire surface of the substrate, avoiding the region where the plasma is generated. This prevents the intense chemical reaction between the material gas and the plasma gas, and suppresses the generation of dust particles.
    The hole formed in the partition plate has a gas flow rate of the reaction gas (oxygen gas) in the hole u, a substantial hole length L, and a mutual gas diffusion coefficient (ie, a mutual diffusion coefficient of oxygen gas and material gas) as D. When u l / d> 1, the condition is met. This condition is set such that the amount of movement due to diffusion of the material gas is suppressed when passing through the hole and assuming that the reaction gas (oxygen gas) is convection and the material gas moves to the opposite side by diffusion.
    The partition plate is connected to a high frequency feeder that supplies high frequency power for cleaning. Timely high frequency power is provided to the partition plate to generate a cleaning plasma in the film formation processing space.
    A gas tank provided with a uniform plate was provided on the inlet side of the plurality of passages. The material gas introduced into the film formation processing space is dispersed and uniformized so that a large area substrate can be formed.
    A discharge electrode is provided at an intermediate position of the plasma generating space, and plasma is generated between the electrode and the partition wall and the upper wall forming the plasma generating space.
    Discharge electrodes are provided at positions above the plasma generation space, and plasma is generated between the electrodes and the partition plates.
    The film forming method performed in the CVD film forming apparatus is a method of forming a film on a substrate with active species generated by plasma and a material gas. In the partition plate in which a plurality of holes are formed, the vacuum chamber is separated into a plasma generation space and a film formation processing space. The material gas provided in the vacuum container is introduced directly into the film formation processing space. Active species generated from the reaction gas in the plasma generating space are introduced into the film forming space through a plurality of holes formed in the partition plate.
    The plurality of holes formed in the partition plate satisfy the condition of u L / D> 1 when u has a gas flow rate in the hole, a length of a substantial life saving L, and a mutual gas diffusion coefficient D.
    Preferably, the high frequency power is supplied to the partition plate to generate plasma in the film formation processing space, thereby timely cleaning the film formation processing space.
    EMBODIMENT OF THE INVENTION Next, preferred embodiment of this invention is described according to an accompanying drawing.
    1 to 3, a first embodiment of a CVD film-forming apparatus according to the present invention will be described. In Fig. 1, in the CVD film forming apparatus, TEOS is used as the material gas, and a silicon oxide film is deposited on the upper surface of the ordinary TFT glass substrate 11 as a gate insulating film. The container 12 of the CVD film forming apparatus is a vacuum container in which the inside thereof is maintained in a desired vacuum state by the exhaust mechanism 13 during the film forming process. The exhaust mechanism 13 is connected to the exhaust port 14 formed in the vacuum container 12. The inner space of the vacuum container 12 is separated into the upper plasma generation space 16 and the lower film formation processing space 17 by the partition wall 15 made of a conductive member. The glass substrate 11 is arrange | positioned on the board | substrate holding mechanism 18 provided in the film-forming process space 17. The glass substrate 11 is substantially parallel to the partition plate 11, and is provided so that the film-forming surface may face the lower surface of the partition plate 15. As shown in FIG. The substrate holding mechanism 18 is at the same potential as the vacuum container 12 and is held at the ground potential. The heater 20 is provided inside the substrate holding mechanism 18. The temperature of the glass substrate 11 is maintained at a constant temperature by the heater 20.
    As shown, the interior of the vacuum vessel 12 is separated into the plasma generation space 16 and the film formation processing space 17 by the partition plate 15. The partition plate 15 is provided with a plurality of holes 22 penetrating therebetween. The plasma generation space 16 and the film formation processing space 17 are connected through the plurality of holes 22. The cross section of the hole 22 is enlarged and shown in FIG. The conditions under which the holes 22 are satisfied are described below.
    The structure of the vacuum container 12 is explained in full detail. The vacuum container 12 is comprised from the upper container 12a which forms the plasma generation space 16, and the lower container 12b which forms the film-forming processing space 16 from a viewpoint which is easy to assemble. When assembling the upper container 12a and the lower container 12b to make the vacuum container 12, the partition plate 15 and the related member are sandwiched between both. These components are assembled to form a plasma generating space 16 and a film forming processing space 17. On the other hand, the plasma generating space 16 is generated by the partition plate 15, its associated member, and the upper container 12a. As shown, the region for generating the plasma 23 is a partition plate 15, an upper wall plate 24 made of a conductive member, a plurality of pipe members 25 connecting them, and an electrode 26 disposed at a central position. Formed. The partition plate 15 and the upper wall plate 24 are in a parallel position, are joined by a plurality of pipe members 25 and are integrated. The plurality of pipe members 25 connecting the partition plate 15 and the upper wall plate 24 serve as a passage through which the material gas passes. The upper space of the upper wall plate 24 and the lower space of the partition wall 15, that is, the film formation processing space 17, are communicated with each other. The pipe member 25 is formed of a conductive member, and the outer surface thereof is covered with the ceramic cover 27. The partition plate 15, the electrode 26, and the upper wall plate 24 are supported by two annular insulating members 28 and 29 provided along the side inner surface of the upper container 12a. The annular insulating member 28 is provided with an introduction pipe 30 for introducing oxygen gas into the plasma generation space 17 from the outside. The introduction pipe 30 is connected to the oxygen gas supply source 32 through the mass flow controller 31 which controls the flow.
    3 shows a plan view of main parts of the electrode portion. The electrode 26 is formed with a plurality of holes 26a. The pipe member 25 is arrange | positioned at the hole 26a.
    A gas tank provided with a uniform plate 33 is provided between the upper wall plate 24 and the ceiling of the upper container 12a. The uniform plate 33 is a plate material in which a plurality of holes are formed uniformly. An introduction pipe 34 through which material gas is introduced is provided in the ceiling of the upper container 12a. The material gas is introduced into the gas tank of the vacuum vessel 12 by the introduction pipe 34. Moreover, the power introduction rod 35 connected to the electrode 26 and the power introduction rod 36 connected to the partition plate 15 are provided in the ceiling part of the upper container 12a. The high frequency electric power for cleaning is supplied to the partition plate 15 by the electric power introduction rod 36. The electric power introduction rods 35 and 36 are all covered with the insulators 37 and 38, and are insulated from other metal parts.
    The film forming method by the above CVD film forming apparatus will be described. The glass substrate 11 is carried in in the inside of the vacuum container 12 by the carrier robot which is not shown in figure, and is arrange | positioned on the board | substrate holding mechanism 18. As shown in FIG. The inside of the vacuum container 12 is exhausted by the exhaust mechanism 13, is decompressed and maintained in a desired vacuum state. Next, oxygen gas is introduced into the plasma generation space 16 of the vacuum vessel 12 through the introduction pipe 30. At this time, the flow rate of the oxygen gas is controlled by an external mass flow rate controller 31. Using the formulas (1) and (2), the oxygen flow rate u can be obtained from the oxygen gas flow rate Q O2 , the pressure P O2 on the film formation processing space side, and the temperature T of the partition wall.
    Q O2 = ρ O2 u A (1)
    P O2 = ρ O2 RT / M (2)
    Where ρ O2 : density of oxygen gas (kg / m 3 )
    M: molecular weight of oxygen gas (O 2 = 32)
    T: absolute temperature (k)
    A: total cross-sectional area of the holes 22 formed in the partition wall 15 (m 2 )
    u: flow rate of oxygen gas flowing through the hole 22 (m / s)
    R: gas constant (8.314J / mol · k × 10 -3)
    TEOS, which is a material gas, is introduced into the vacuum vessel 12 through the introduction pipe 34. TEOS is first introduced into the gas tank, uniformized in the uniform plate 33, and directly introduced into the film formation processing space 17 through the plurality of pipe members 25. Since the board | substrate holding mechanism 18 provided in the film-forming process space 17 is energized to the heater 20, it is previously hold | maintained at a fixed temperature.
    High frequency power is provided to the electrode 26 through the electrode introduction rod 35. Discharge is generated by the high frequency power, and oxygen plasma 23 is generated around the electrode 26 in the plasma generating space 16. An oxygen plasma 23 is generated to generate radicals (excited active species) which are neutral excited species. When introducing TEOS into the vacuum vessel 12, the TEOS does not directly contact the oxygen plasma 23. The introduced TEOS does not react violently with the oxygen plasma.
    In the CVD film deposition apparatus of the present embodiment, the internal space of the vacuum container 12 is separated into the plasma generation space 16 and the film formation processing space 17 by the partition plate 15. The CVD film-forming apparatus introduces oxygen gas into the plasma generation space 16 and provides high frequency power to the electrode 26 to generate the oxygen plasma 23. On the other hand, the CVD film-forming apparatus introduces TEOS directly into the film-forming processing space 17.
    In the form of the plurality of holes 22 formed in the partition plate 15 in a penetrating state, the oxygen gas in the plasma generation space 16 and the TEOS in the film formation processing space 17 are respectively provided in the space opposite to each other through the holes 22. Given the mass transfer flow and diffusion transfer, it is determined to limit the transfer amount to a desired range. That is, the gas cross-diffusion coefficient when the temperature T of the partition wall and the pressure on the film formation space side is P O2 is D, and as shown in FIG. 2, the length of the minimum diameter portion of the hole 22 ( When the characteristic length of the hole 22) is set to L, the relationship of u L / D> 1 is determined using the flow rate of the oxygen gas.
    The relationship of u L> 1 is derived as follows. For example, using the TEOS gas density (ρ TEOS ), the diffusion flow rate (u TEOS ), and the mutual gas diffusion coefficient (D TEOS-O2 ) for the relationship between oxygen and TEOS moving through-hole 25, 3) This holds true. If the characteristic length of the through hole is L, equation (3) may be similar to equation (4). As a result of comparing both sides of Equation (4), the diffusion flow rate (u TEOS ) of TEOS is represented by -D TEOSO 2 / L. Therefore, when the oxygen flow rates obtained in the above formulas (1) and (2) are u and the diffusion flow rate of TEOS is -D TEOSO2 / L, the ratio of the absolute values of these two flow rates, i.e. | -U / (-D TEOSO2 / L) | = uL / D The value of TEOSO2 is the ratio between the oxygen transport rate and the TEOS diffusion rate, and setting the ratio uL / D TEOSO2 to 1 or more depends on the convection Means that the flow rate is large. In other words, setting the value of uL / D TEOSO2 to 1 or more means that the diffusion effect of TEOS is small.
    TEOS u TEOS = -D TEOSO2 grad TEOS … … (3)
    ρ TEOS u TEOS ≒ -D TEOS-O2 ρ TEOS / L. … (4)
    The plasma generating space 16 and the film formation processing space 17 are partitioned by partition walls 15 having a plurality of holes 22 having the above conditions. The hole 22 having the above conditions reduces the contact between the oxygen plasma and the TEOS introduced directly into the film forming space 17. The hole 22 having the above conditions prevents the TEOS and the oxygen plasma from reacting violently as in the conventional apparatus.
    Regarding the radicals generated in the plasma generation space 16, an appropriate amount of radicals required for CVD film formation of the glass substrate 11 diffuses and moves in the film formation processing space 17 through the holes 22 formed in the partition plate 15. do. As a result, TEOS is radically activated to form an oxide film (SiO 2 ) on the surface of the glass substrate 11.
    Next, specific examples will be described. The diameter of the hole 22 of the partition plate 15 is 0.5 mm, the total number of the holes 22 is 1800, and the gas flow rate of oxygen gas is 500 sccm (0 ° C., volume flow rate per cc) (cc / min). Qo₂ = 1.19 × 10 -5 (kg / s) = 0.0225 m 2 / s, ρo₂ = 8.14 × 10 -4 (kg / m 3), A = 3.53 × 10 -4 (m 2), where u = 41.3 (m / s), and uL / D TEOS-O2 The value of is 5.5. In this case, the convective movement of oxygen gas is dominant compared to the diffusion movement of TEOS. The diffusion of TEOS into the plasma generation space 16 filled with the oxygen plasma 23 is small, and as a result, the generation of dust particles is reduced.
    Next, the cleaning of the film formation processing space 17 will be described. According to the CVD film forming apparatus of the present embodiment, since plasma is not sufficiently diffused in the film forming processing space 17, it is difficult to clean the film forming processing space 17. The electric power introduction rod 36 is electrically connected to the partition plate 15. The high frequency power was supplied to the partition plate 15 to generate, for example, NF3 plasma in the film formation processing space 17. The inside of the film formation processing space 17 is cleaned with the generated plasma. The timing of supplying and cleaning the high frequency electric power to the electric power introduction rod 36 is timely performed in accordance with a predetermined predetermined time or every predetermined number of substrates.
    Next, with reference to FIG. 4, 2nd Embodiment of the CVD film-forming apparatus which concerns on this invention is described. In FIG. 4, the same code | symbol is attached | subjected to the element substantially the same as the element demonstrated in FIG. 1, and the detailed description here is abbreviate | omitted. The characteristic structure of this embodiment remove | eliminated the said upper wall board 24, the disk-shaped insulation member 41 was provided in the upper part, and the electrode 26 was arrange | positioned below. The plasma generating space 16 of the parallel flat plate type is formed by the electrode 26 and the partition plate 15. A plurality of pipe members 25 forming a passage through which the material gas flows are provided between the insulating member 41 and the partition plate 15. The rest of the configuration is substantially the same as that of the first embodiment. Moreover, the effect | action and effect by the CVD film-forming apparatus which concerns on 2nd Embodiment are also the same as that of said 1st Embodiment.
    In the said embodiment, although the example of TEOS was demonstrated as a material gas, it is not limited to this, Another material gas can be used. The principle idea of the present invention is applicable to all processes in which dust particles are generated by contacting the material gas with plasma and ions are incident on the substrate, and the film is applied to film formation, surface treatment, and isotropic etching. It can be applied.
    As can be seen from the above description, according to the present invention, the plasma generation space and the film formation processing space are partitioned by partition plates having through-holes in which convective movements satisfy conditions prevailing. The material gas was introduced directly into the film formation processing space without contacting the plasma. Intense chemical reaction between the material gas and the plasma can be prevented, and as a result, generation of dust particles can be suppressed, and ion incidence to the substrate can be prevented.
    A plurality of passages for directly introducing material gas are provided in the film formation processing space, and a gas tank provided with a uniform plate is provided upstream of the passage. The material gas can be introduced uniformly in the film formation processing space, and radicals can also be uniformly supplied to the film formation processing space by a plurality of holes formed in the partition plate. This makes it possible to improve the plasma distribution in the vicinity of the surface of the substrate and to effectively form a film on a large area substrate.
    Cleaning rods were installed in the partition plates. Power was supplied at a timely timing to allow cleaning. Even if the plasma generating space and the film forming processing space are formed by partitioning the partition plate, the cleanliness of the film forming processing space can be properly maintained.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] In a CVD film forming apparatus, plasma is generated in a vacuum vessel to generate active species, and the film is subjected to film formation on the substrate with the active species and a material gas.
    A partition plate having a plurality of holes is provided to separate the interior of the vacuum container into a plasma generation space and a film formation processing space;
    The material gas provided in the vacuum container is introduced directly into the film formation processing space through a plurality of conductive passages which are provided through the plasma generation space and the partition plate and are distributed and distributed.
    And the active species generated in the plasma generation space is introduced into the film formation processing space through the plurality of holes formed in the partition plate.
    [2" claim-type="Currently amended] The method of claim 1, wherein each of the plurality of holes formed in the partition wall plate has a gas flow rate of u, a substantial hole length L, and a mutual gas diffusion coefficient D of u L / D > The active film is introduced into the film formation processing space while the conditions are satisfied.
    [3" claim-type="Currently amended] The CVD method according to claim 1, wherein the partition wall portion is connected to a high frequency power supply unit for supplying high frequency power for cleaning, and supplying high frequency power in a timely manner to the partition wall to generate a cleaning plasma in the film formation processing space. Deposition device.
    [4" claim-type="Currently amended] The CVD film forming apparatus according to claim 1, wherein a gas tank provided with a uniform plate is provided at an inlet side of the plurality of passages.
    [5" claim-type="Currently amended] The CVD film forming apparatus according to claim 1, wherein a discharge electrode is provided at an intermediate position of the plasma generating space, and a plasma is generated between the electrode and the partition plate and the upper wall forming the plasma generating space. .
    [6" claim-type="Currently amended] The CVD film forming apparatus according to claim 1, wherein a discharge electrode is provided at an upper position of the plasma generating space, and a plasma is generated between the electrode and the partition plate.
    类似技术:
    公开号 | 公开日 | 专利标题
    US9252001B2|2016-02-02|Plasma processing apparatus, plasma processing method and storage medium
    US20180166258A1|2018-06-14|Substrate processing apparatus
    US9373499B2|2016-06-21|Batch-type remote plasma processing apparatus
    US8741788B2|2014-06-03|Formation of silicon oxide using non-carbon flowable CVD processes
    TWI433252B|2014-04-01|Activated gas injector, film deposition apparatus, and film deposition method
    US20130337653A1|2013-12-19|Semiconductor processing apparatus with compact free radical source
    KR100492135B1|2005-09-02|Faceplate, reactor comprising the faceplate
    KR101380985B1|2014-04-04|Plasma process apparatus
    US6863732B2|2005-03-08|Heat treatment system and method
    US4098923A|1978-07-04|Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
    TWI450333B|2014-08-21|Heat processing apparatus for semiconductor process
    US5525157A|1996-06-11|Gas injectors for reaction chambers in CVD systems
    US6251187B1|2001-06-26|Gas distribution in deposition chambers
    KR100560867B1|2006-03-13|Oxidizing method and oxidation system
    KR100241171B1|2000-02-01|A plasma enhanced chemical processing reactor and method
    KR100856690B1|2008-09-04|Plasma uniformity control by gas diffuser hole design
    US5792261A|1998-08-11|Plasma process apparatus
    US7510624B2|2009-03-31|Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
    TWI390075B|2013-03-21|Touch chemical chemical vaporization device
    US8227346B2|2012-07-24|Method of producing semiconductor device
    KR100445018B1|2004-08-18|Method and Apparatus for Metallizing High Aspect Ratio Silicon Semiconductor Device Contacts
    CN100524641C|2009-08-05|Plasma processing device
    US5015330A|1991-05-14|Film forming method and film forming device
    KR100771800B1|2007-10-30|Method of cvd for forming silicon nitride film on substrate
    US7104476B2|2006-09-12|Multi-sectored flat board type showerhead used in CVD apparatus
    同族专利:
    公开号 | 公开日
    JP4151862B2|2008-09-17|
    US6245396B1|2001-06-12|
    JPH11312674A|1999-11-09|
    KR100319075B1|2001-12-29|
    TW476807B|2002-02-21|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-02-26|Priority to JP98-62066
    1998-02-26|Priority to JP6206698
    1999-02-01|Priority to JP99-23887
    1999-02-01|Priority to JP2388799A
    1999-02-25|Application filed by 니시히라 순지, 아네르바 가부시키가이샤
    1999-09-27|Publication of KR19990072926A
    2001-12-29|Application granted
    2001-12-29|Publication of KR100319075B1
    优先权:
    申请号 | 申请日 | 专利标题
    JP98-62066|1998-02-26|
    JP6206698|1998-02-26|
    JP99-23887|1999-02-01|
    JP2388799A|JP4151862B2|1998-02-26|1999-02-01|CVD equipment|
    [返回顶部]